Low-noise GaAs HEMT

Mitsubishi Electric Corp. has developed a high gain version of a micro-X package high electron mobility transistor (HEMT) that is highly suitable for low-noise amplifiers in 18-20GHz-band satellite broadcasting reception and VSAT systems.

These transistors will mainly be used in the Ka-band direct broadcast satellite and VSAT markets for low-noise amplifiers in reception converters.

The recent launch of the 20GHz(down link)/30GHz(up link) Ka-band systems is expected to increase demand for HEMT, due to the expansion of transmission capacity in current satellite communication systems with the development of high-speed data link and digital/high definition broadcasts.